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Direct-write electron beam lithography in silicon dioxide at low energy
Abstract : Electron beam lithography in silicon dioxide has been investigated with energies ranging from 0.5 up to 6 keV. The etch ratio of SiO2SiO2 has been studied and interpreted with regard to the limited penetration ...
Silicon nitride nanotemplate fabrication using inductively coupled plasma etching process
Abstract : In this work, we have investigated the fabrication of ordered silicon nitride nanohole arrays as part of an overall process aimed at producing organized silicon nanocrystals. The authors have demonstrated that ...