Now showing documents 1-6 of 6
Raman study of As outgassing and damage induced by ion implantation in Zn-doped GaAs
Abstract : Room temperature micro-Raman investigations of LO phonon and LO phonon-plasmon coupling is used to study the AsAs outgassing mechanism and the disordering effects induced by ion implantation in ZnZn-doped GaAsGaAs ...
Carrier transport properties in the vicinity of single seld-assembled quantum dots determined by low-voltage cathodoluminescence imaging
Abstract : We propose a method to investigate the carrier transport properties in the ultrathin wetting layer of a self-assembled quantum dot (QD) structure using low-voltage cathodoluminescence (CL) imaging. Measurements ...
UV laser controlled quantum well intermixing in InAlGaAs/GaAs heterostructures
Abstract : The influence of surface irradiation of GaAs with a KrF excimer laser on the magnitude of the quantum well intermixing (QWI) effect has been investigated on GaAs/AlGaAs and GaAs/AlGaAs/InAlGaAs QWs heterostructures. ...
Single-electron transistors with wide operating temperature range
Abstract : Single-electron transistors are fabricated with a planar self-aligned process using chemical mechanical polishing. The method is demonstrated with Ti∕TiOxTi∕TiOx junctions and resistless lithography. The device ...
Organization of silicon nanocrystals by localized electrochemical etching
Abstract : An approach to form a monolayer of organized silicon nanocrystals on a monocrystalline Si wafer is reported. Ordered arrays of nanoholes in a silicon nitride layer were obtained by combining electron beam ...
Arrays of holes fabricated by electron-beam lithography combined with image reversal process using nickel pulse reversal plating
Abstract : A critical issue in fabricating arrays of holes is to achieve high-aspect-ratio structures. Formation of ordered arrays of nanoholes in silicon nitride was investigated by the use of ultrathin hard etch mask ...