Now showing documents 1-3 of 3
Raman study of As outgassing and damage induced by ion implantation in Zn-doped GaAs
Abstract : Room temperature micro-Raman investigations of LO phonon and LO phonon-plasmon coupling is used to study the AsAs outgassing mechanism and the disordering effects induced by ion implantation in ZnZn-doped GaAsGaAs ...
Carrier transport properties in the vicinity of single seld-assembled quantum dots determined by low-voltage cathodoluminescence imaging
Abstract : We propose a method to investigate the carrier transport properties in the ultrathin wetting layer of a self-assembled quantum dot (QD) structure using low-voltage cathodoluminescence (CL) imaging. Measurements ...
UV laser controlled quantum well intermixing in InAlGaAs/GaAs heterostructures
Abstract : The influence of surface irradiation of GaAs with a KrF excimer laser on the magnitude of the quantum well intermixing (QWI) effect has been investigated on GaAs/AlGaAs and GaAs/AlGaAs/InAlGaAs QWs heterostructures. ...