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Novel concept of gas sensitivity characterization of materials suited for implementation in FET-based gas sensors
(2016)
Abstract : We propose a novel technique to investigate the gas sensitivity of materials for implementation in field-effect transistor-based gas sensors. Our technique is based on the measurement of the surface charge induced ...
Direct-write electron beam lithography in silicon dioxide at low energy
(2010)
Abstract : Electron beam lithography in silicon dioxide has been investigated with energies ranging from 0.5 up to 6 keV. The etch ratio of SiO2SiO2 has been studied and interpreted with regard to the limited penetration ...
Contributions à l'avancement de techniques de caractérisation de semiconducteur au microscope électronique à balayage
(Université de Sherbrooke, 1998)
Dans le cadre de ce projet de doctorat, plusieurs contributions importantes ont été apportées aux domaines scientifiques. Premièrement, un programme de simulation de trajectoire d'électrons dans un solide par la méthode ...
Resistless electron beam lithography process for the fabrication of sub-50 nm silicide structures
(1997)
We report on a study of the fabrication of submicron silicide structures with a resistless lithography technique. Several different metals can be used as a basis for producing silicide using this method; in this work, ...
Organization of silicon nanocrystals by localized electrochemical etching
(2009)
Abstract : An approach to form a monolayer of organized silicon nanocrystals on a monocrystalline Si wafer is reported. Ordered arrays of nanoholes in a silicon nitride layer were obtained by combining electron beam ...
Selective dry etching of TiN nanostructures over SiO2 nanotrenches using a CI2/Ar/N2 inductively coupled plasma
(2016)
Abstract : An inductively coupled plasma etch process for the fabrication of TiN nanostructures over nanotopography is presented. Using a Cl2/Ar/N2 plasma, a selectivity of 50 is achieved over SiO2. The effect of N2 flow ...
Chemical composition of nanoporous layer formed by electrochemical etching of p-type GaAs
(2016)
Abstract : We have performed a detailed characterization study of electrochemically etched p-type GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and characterized through cathodoluminescence ...
Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
(2014)
Abstract : The development of metallic single electron transistor (SET) depends on the downscaling and the electrical properties of its tunnel junctions. These tunnel junctions should insure high tunnel current levels, low ...
A silicone nanocrystal tunnel field effect transistor
(2014)
Abstract : In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling ...
Arrays of holes fabricated by electron-beam lithography combined with image reversal process using nickel pulse reversal plating
(2004)
Abstract : A critical issue in fabricating arrays of holes is to achieve high-aspect-ratio structures. Formation of ordered arrays of nanoholes in silicon nitride was investigated by the use of ultrathin hard etch mask ...