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Silicon nitride nanotemplate fabrication using inductively coupled plasma etching process
(2011)
Abstract : In this work, we have investigated the fabrication of ordered silicon nitride nanohole arrays as part of an overall process aimed at producing organized silicon nanocrystals. The authors have demonstrated that ...
Technology platform for the fabrication of titanium nanostructures
(2011)
Abstract : This paper presents two approaches for the fabrication of top-down titanium nanostructures. The first approach involves electron beam lithography followed by a tailored titanium plasma etching. The two main ...
A fabrication process for emerging nanoelectronic devices based on oxide tunnel junctions
(2017)
Abstract : We present a versatile nanodamascene process for the realization of low-power nanoelectronic devices with different oxide junctions. With this process we have fabricated metal/insulator/metal junctions, metallic ...
Depletion layer imaging using a gaseous secondary electron detector in an environmental scanning electron microscope
(1999)
Abstract : We present a method for imaging depletion layers using the gaseous secondary electron detector (GSED) employed in environmental scanning electron microscopes. GSED images of a p-np-n junction were obtained from ...
Fabrication of p-type porous GaN on silicon and epitaxial GaN
(2013)
Abstract : Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous ...
Spectroscopic ellipsometry on thin titanium oxide layers grown on titanium by plasma oxidation
(2011)
Abstract : Electronic devices based on tunnel junctions require tools able to accurately control the thickness of thin metal and oxide layers on the order of the nanometer. This article shows that multisample ellipsometry ...
Method for fabricating submicron silicide structures on silicon using a resistless electron beam lithography process
(1997)
Abstract : A novel resistless lithography process using a conventional electron beam system is presented. Metallic lines with widths of less than 50 nm were produced on silicon substrates. The process is based on localized ...
Single-electron transistors with wide operating temperature range
(2007)
Abstract : Single-electron transistors are fabricated with a planar self-aligned process using chemical mechanical polishing. The method is demonstrated with Ti∕TiOxTi∕TiOx junctions and resistless lithography. The device ...
Raman study of As outgassing and damage induced by ion implantation in Zn-doped GaAs
(2004)
Abstract : Room temperature micro-Raman investigations of LO phonon and LO phonon-plasmon coupling is used to study the AsAs outgassing mechanism and the disordering effects induced by ion implantation in ZnZn-doped GaAsGaAs ...
Carrier transport properties in the vicinity of single seld-assembled quantum dots determined by low-voltage cathodoluminescence imaging
(2009)
Abstract : We propose a method to investigate the carrier transport properties in the ultrathin wetting layer of a self-assembled quantum dot (QD) structure using low-voltage cathodoluminescence (CL) imaging. Measurements ...