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Spectroscopic ellipsometry on thin titanium oxide layers grown on titanium by plasma oxidation

Droulers, G., Beaumont, A., Beauvais, J., Drouin, D. (2011)

Abstract : Electronic devices based on tunnel junctions require tools able to accurately control the thickness of thin metal and oxide layers on the order of the nanometer. This article shows that multisample ellipsometry ...

Depletion layer imaging using a gaseous secondary electron detector in an environmental scanning electron microscope

Phillips, M. R.; Toth, M.; Drouin, D. (1999)

Abstract : We present a method for imaging depletion layers using the gaseous secondary electron detector (GSED) employed in environmental scanning electron microscopes. GSED images of a p-np-n junction were obtained from ...

Fabrication of p-type porous GaN on silicon and epitaxial GaN

Bilousov, O. V., Geaney, H., Carvajal, J. J., Zubialevich, V. Z., Parbrook, P. J., Giguère, A., Drouin, D., Díaz, F., Aguiló, M., O'Dwyer, C. (2013)

Abstract : Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN ﬁlms on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous ...

Single-electron transistors with wide operating temperature range

Dubuc, C., Beauvais, J., Drouin, D. (2007)

Abstract : Single-electron transistors are fabricated with a planar self-aligned process using chemical mechanical polishing. The method is demonstrated with Ti∕TiOxTi∕TiOx junctions and resistless lithography. The device ...

Method for fabricating submicron silicide structures on silicon using a resistless electron beam lithography process

Drouin, D.; Beauvais, J.; Lemire, R.; Lavallée, E.; Gauvin, R.; Caron, M. (1997)

Abstract : A novel resistless lithography process using a conventional electron beam system is presented. Metallic lines with widths of less than 50 nm were produced on silicon substrates. The process is based on localized ...

Photoluminescence and cathodoluminescence of Eu:La2O3 nanoparticles synthesized by several methods

Méndez, M., Carvajal, J. J., Cesteros, Y., Marsal, L. F., Martínez-Ferrero, E., Giguère, A., Drouin, D., Salagre, P., Formentín, P., Pallarès, J., Aguiló, M., Díaz, F. (2010)

Abstract : Europium-doped La2O3 nanocrystalline powders with sizes ranging from 4 nm to 300 nm have been obtained by the modified Pechini, hydrothermal with conventional furnace, hydrothermal with microwave furnace, and ...

Raman study of As outgassing and damage induced by ion implantation in Zn-doped GaAs

Barba, D., Aimez, V., Beauvais, J., Beerens, J., Drouin, D., Chicoine, M., Schiettekatte, F. (2004)

Abstract : Room temperature micro-Raman investigations of LO phonon and LO phonon-plasmon coupling is used to study the AsAs outgassing mechanism and the disordering effects induced by ion implantation in ZnZn-doped GaAsGaAs ...

Carrier transport properties in the vicinity of single seld-assembled quantum dots determined by low-voltage cathodoluminescence imaging

Dupuy, E., Morris, D., Pauc, N., Aimez, V., Gendry, M., Drouin, D. (2009)

Abstract : We propose a method to investigate the carrier transport properties in the ultrathin wetting layer of a self-assembled quantum dot (QD) structure using low-voltage cathodoluminescence (CL) imaging. Measurements ...

Response to "Comment on 'Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence'" [Appl. Phys. Lett. 97, 166101 (2010)]

Pauc, N., Phillips, M. R., Aimez, V., Drouin, D. (2010)

Abstract : The authors are aware that there are number of theoretical models available to simulate cathodoluminescence (CL) contrast as a function of the distance, r, from a nonradiative defect. In our letter1 a simple ...

UV laser controlled quantum well intermixing in InAlGaAs/GaAs heterostructures

Genest, J., Dubowski, J. J., Aimez, V., Pauc, N., Drouin, D., Post, M. (2007)

Abstract : The influence of surface irradiation of GaAs with a KrF excimer laser on the magnitude of the quantum well intermixing (QWI) effect has been investigated on GaAs/AlGaAs and GaAs/AlGaAs/InAlGaAs QWs heterostructures. ...