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Spectroscopic ellipsometry on thin titanium oxide layers grown on titanium by plasma oxidation
(2011)
Abstract : Electronic devices based on tunnel junctions require tools able to accurately control the thickness of thin metal and oxide layers on the order of the nanometer. This article shows that multisample ellipsometry ...
Depletion layer imaging using a gaseous secondary electron detector in an environmental scanning electron microscope
(1999)
Abstract : We present a method for imaging depletion layers using the gaseous secondary electron detector (GSED) employed in environmental scanning electron microscopes. GSED images of a p-np-n junction were obtained from ...
Method for fabricating submicron silicide structures on silicon using a resistless electron beam lithography process
(1997)
Abstract : A novel resistless lithography process using a conventional electron beam system is presented. Metallic lines with widths of less than 50 nm were produced on silicon substrates. The process is based on localized ...
Single-electron transistors with wide operating temperature range
(2007)
Abstract : Single-electron transistors are fabricated with a planar self-aligned process using chemical mechanical polishing. The method is demonstrated with Ti∕TiOxTi∕TiOx junctions and resistless lithography. The device ...
Raman study of As outgassing and damage induced by ion implantation in Zn-doped GaAs
(2004)
Abstract : Room temperature micro-Raman investigations of LO phonon and LO phonon-plasmon coupling is used to study the AsAs outgassing mechanism and the disordering effects induced by ion implantation in ZnZn-doped GaAsGaAs ...
Response to "Comment on 'Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence'" [Appl. Phys. Lett. 97, 166101 (2010)]
(2010)
Abstract : The authors are aware that there are number of theoretical models available to simulate cathodoluminescence (CL) contrast as a function of the distance, r, from a nonradiative defect. In our letter1 a simple ...
UV laser controlled quantum well intermixing in InAlGaAs/GaAs heterostructures
(2007)
Abstract : The influence of surface irradiation of GaAs with a KrF excimer laser on the magnitude of the quantum well intermixing (QWI) effect has been investigated on GaAs/AlGaAs and GaAs/AlGaAs/InAlGaAs QWs heterostructures. ...
Contributions à l'avancement de techniques de caractérisation de semiconducteur au microscope électronique à balayage
(Université de Sherbrooke, 1998)
Dans le cadre de ce projet de doctorat, plusieurs contributions importantes ont été apportées aux domaines scientifiques. Premièrement, un programme de simulation de trajectoire d'électrons dans un solide par la méthode ...
Fabrication of p-type porous GaN on silicon and epitaxial GaN
(2013)
Abstract : Porous GaN layers are grown on silicon from gold or platinum catalyst seed layers, and self-catalyzed on epitaxial GaN films on sapphire. Using a Mg-based precursor, we demonstrate p-type doping of the porous ...
Photoluminescence and cathodoluminescence of Eu:La2O3 nanoparticles synthesized by several methods
(2010)
Abstract : Europium-doped La2O3 nanocrystalline powders with sizes ranging from 4 nm to 300 nm have been obtained by the modified Pechini, hydrothermal with conventional furnace, hydrothermal with microwave furnace, and ...