Search
Now showing documents 1-10 of 23
Contributions à l'avancement de techniques de caractérisation de semiconducteur au microscope électronique à balayage
(Université de Sherbrooke, 1998)
Dans le cadre de ce projet de doctorat, plusieurs contributions importantes ont été apportées aux domaines scientifiques. Premièrement, un programme de simulation de trajectoire d'électrons dans un solide par la méthode ...
Resistless electron beam lithography process for the fabrication of sub-50 nm silicide structures
(1997)
We report on a study of the fabrication of submicron silicide structures with a resistless lithography technique. Several different metals can be used as a basis for producing silicide using this method; in this work, ...
Technology platform for the fabrication of titanium nanostructures
(2011)
Abstract : This paper presents two approaches for the fabrication of top-down titanium nanostructures. The first approach involves electron beam lithography followed by a tailored titanium plasma etching. The two main ...
A fabrication process for emerging nanoelectronic devices based on oxide tunnel junctions
(2017)
Abstract : We present a versatile nanodamascene process for the realization of low-power nanoelectronic devices with different oxide junctions. With this process we have fabricated metal/insulator/metal junctions, metallic ...
Silicon nitride nanotemplate fabrication using inductively coupled plasma etching process
(2011)
Abstract : In this work, we have investigated the fabrication of ordered silicon nitride nanohole arrays as part of an overall process aimed at producing organized silicon nanocrystals. The authors have demonstrated that ...
Organization of silicon nanocrystals by localized electrochemical etching
(2009)
Abstract : An approach to form a monolayer of organized silicon nanocrystals on a monocrystalline Si wafer is reported. Ordered arrays of nanoholes in a silicon nitride layer were obtained by combining electron beam ...
Direct-write electron beam lithography in silicon dioxide at low energy
(2010)
Abstract : Electron beam lithography in silicon dioxide has been investigated with energies ranging from 0.5 up to 6 keV. The etch ratio of SiO2SiO2 has been studied and interpreted with regard to the limited penetration ...
Novel concept of gas sensitivity characterization of materials suited for implementation in FET-based gas sensors
(2016)
Abstract : We propose a novel technique to investigate the gas sensitivity of materials for implementation in field-effect transistor-based gas sensors. Our technique is based on the measurement of the surface charge induced ...
Selective dry etching of TiN nanostructures over SiO2 nanotrenches using a CI2/Ar/N2 inductively coupled plasma
(2016)
Abstract : An inductively coupled plasma etch process for the fabrication of TiN nanostructures over nanotopography is presented. Using a Cl2/Ar/N2 plasma, a selectivity of 50 is achieved over SiO2. The effect of N2 flow ...
Chemical composition of nanoporous layer formed by electrochemical etching of p-type GaAs
(2016)
Abstract : We have performed a detailed characterization study of electrochemically etched p-type GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and characterized through cathodoluminescence ...