Browsing Génie by Subject "Zinc"
Now showing documents 1-1 of 1
-
Raman study of As outgassing and damage induced by ion implantation in Zn-doped GaAs
(2004)Abstract : Room temperature micro-Raman investigations of LO phonon and LO phonon-plasmon coupling is used to study the AsAs outgassing mechanism and the disordering effects induced by ion implantation in ZnZn-doped GaAsGaAs ...