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dc.contributor.authorDrouin, Dominiquefr
dc.contributor.authorBeauvais, J.fr
dc.contributor.authorLavallée, E.fr
dc.contributor.authorMichel, S.fr
dc.contributor.authorMouine, J.fr
dc.contributor.authorGauvin, R.fr
dc.date.accessioned2017-11-23T14:52:12Z
dc.date.available2017-11-23T14:52:12Z
dc.date.created1997fr
dc.date.issued2017-11-23
dc.identifier.urihttp://hdl.handle.net/11143/11522
dc.description.abstractWe report on a study of the fabrication of submicron silicide structures with a resistless lithography technique. Several different metals can be used as a basis for producing silicide using this method; in this work, results will be discussed for both platinum and nickel silicide. The feasibility of producing nanostructures using polycrystalline silicon as a base growth layer for metal–oxide– semiconductor, and other device applications have also been demonstrated. Threshold doses for this method for submicron lines (<50 nm) and square areas were obtained in order to establish a framework for the fabrication of more complex devices. Preliminary electrical measurements were carried out which indicate that the resistivity of the silicide is 45 [mu omega] cm, and that the barrier height of the silicide/(high resistivity silicon) interface is 0.56 eV.fr
dc.language.isoengfr
dc.relation.isformatofhttps://doi.org/10.1116/1.589627fr
dc.relation.ispartofISSN:2166-2754fr
dc.relation.ispartofJournal of Vacuum Science and Technology. Part B. Nanotechnology & Microelectronicsfr
dc.rightsAttribution - Pas d’Utilisation Commerciale - Pas de Modification 2.5 Canada*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.5/ca/*
dc.subjectNanofabricationfr
dc.subjectElectrical resistivityfr
dc.subjectNanolithographyfr
dc.subjectSiliconfr
dc.subjectPlatinumfr
dc.titleResistless electron beam lithography process for the fabrication of sub-50 nm silicide structuresfr
dc.typeArticlefr
udes.description.typestatusPost-publicationfr
udes.description.typepubRévisé et accepté par des pairsfr
udes.description.pages2269-2273fr
udes.description.period15(6)fr
udes.description.diffusionDiffusé par Savoirs UdeS, le dépôt institutionnel de l'Université de Sherbrookefr
dc.identifier.bibliographicCitationDrouin, D., Beauvais, J., Lavallée, E., Michel, S., Mouine, J., et Mouine, J. (1997). Resistless electron beam lithography process for the fabrication of sub-50 nm silicide structures. Journal of Vacuum Science and Technology. Part B. Nanotechnology & Microelectronics, 15(6), 2269-2273. https://doi.org/10.1116/1.589627fr
udes.description.sourceJournal of Vacuum Science and Technology. Part B. Nanotechnology & Microelectronicsfr
udes.autorisation.depottruefr
udes.description.ordreauteursDrouin, Dominique; Beauvais, J.; Lavallée, E.; Michel, S.; Mouine, J.; Gauvin, R.fr


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Except where otherwise noted, this document's license is described as Attribution - Pas d’Utilisation Commerciale - Pas de Modification 2.5 Canada