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A fabrication process for emerging nanoelectronic devices based on oxide tunnel junctions

dc.contributor.authorDrouin, Dominiquefr
dc.contributor.authorDroulers, Gabrielfr
dc.contributor.authorLabalette, Marinafr
dc.contributor.authorSang, Bruno Leefr
dc.contributor.authorHarvey-Collard, Patrickfr
dc.contributor.authorPioro-Ladrière, Michelfr
dc.contributor.authorEcoffey, Sergefr
dc.contributor.otherSouifi, Abdelkaderfr
dc.contributor.otherJeannot, Simonfr
dc.contributor.otherMonfray, Stéphanefr
dc.date.accessioned2017-10-06T15:24:17Z
dc.date.available2017-10-06T15:24:17Z
dc.date.created2017fr
dc.date.issued2017-10-06
dc.identifier.urihttp://hdl.handle.net/11143/11325
dc.description.abstractAbstract : We present a versatile nanodamascene process for the realization of low-power nanoelectronic devices with different oxide junctions. With this process we have fabricated metal/insulator/metal junctions, metallic single electron transistors, silicon tunnel field effect transistors, and planar resistive memories. These devices do exploit one or two nanometric-scale tunnel oxide junctions based on TiO2, SiO2, HfO2, Al2O3, or a combination of those. Because the nanodamascene technology involves processing temperatures lower than 300°C, this technology is fully compatible with CMOS back-end-of-line and is used for monolithic 3D integration.fr
dc.language.isoengfr
dc.relation.isformatofhttps://doi.org/10.1155/2017/8613571fr
dc.relation.ispartofISSN:1687-4129fr
dc.relation.ispartofJournal of nanomaterialsfr
dc.rightsAttribution - Pas d’Utilisation Commerciale - Pas de Modification 2.5 Canada*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.5/ca/*
dc.subjectNanoelectronic devicesfr
dc.subjectOxide tunnel junctionsfr
dc.titleA fabrication process for emerging nanoelectronic devices based on oxide tunnel junctionsfr
dc.typeArticlefr
udes.description.typestatusPost-publicationfr
udes.description.typepubRévisé et accepté par des pairsfr
udes.description.pages1-8fr
udes.description.period2017fr
udes.description.diffusionDiffusé par Savoirs UdeS, le dépôt institutionnel de l'Université de Sherbrookefr
dc.identifier.bibliographicCitationDrouin, D., Droulers, G., Labalette, M., Sang, B. L., Harvey-Collard, P., ... Pioro-Ladrière, M., Ecoffey, S. (2017). A fabrication process for emerging nanoelectronic devices based on oxide tunnel junctions. Journal of nanomaterials, 2017, 1-8. https://doi.org/10.1155/2017/8613571fr
udes.description.sourceJournal of nanomaterialsfr
udes.autorisation.depottruefr
udes.description.ordreauteursDrouin, Dominique; Droulers, Gabriel; Labalette, Marina; Sang, Bruno Lee; Harvey-Collard, Patrick; Souifi, Abdelkader; Jeannot, Simon; Monfray, Stéphane; Pioro-Ladrière, Michel; Ecoffey, Sergefr


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Except where otherwise noted, this document's license is described as Attribution - Pas d’Utilisation Commerciale - Pas de Modification 2.5 Canada