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dc.contributor.authorDrouin, Dominiquefr
dc.contributor.otherPhillips, M. R.fr
dc.contributor.otherToth, M.fr
dc.date.accessioned2017-10-06T13:53:05Z
dc.date.available2017-10-06T13:53:05Z
dc.date.created1999fr
dc.date.issued2017-10-06
dc.identifier.urihttp://hdl.handle.net/11143/11323
dc.description.abstractAbstract : We present a method for imaging depletion layers using the gaseous secondary electron detector (GSED) employed in environmental scanning electron microscopes. GSED images of a p-np-n junction were obtained from a Si P+PNP+PN power diode. Behavior of the junction contrast as a function of imaging conditions is unrelated to reported GSED contrast formation mechanisms [ A. L. Fletcher, B. L. Thiel, and A. M. Donald, J. Phys. D 30, 2249 (1997)]. Optimum imaging conditions are presented, and the contrast behavior is interpreted in terms of a previously unreported induced current component in GSED images. The presented technique is unique as it will enable imaging of depletion layers in uncoated semiconductor/oxide devices in controlled gaseous environments at elevated specimen temperatures.fr
dc.language.isoengfr
dc.relation.isformatofdoi:http://dx.doi.org/10.1063/1.124281fr
dc.relation.ispartofISSN:1077-3118fr
dc.relation.ispartofApplied physics lettersfr
dc.rightsAttribution - Pas d’Utilisation Commerciale - Pas de Modification 2.5 Canada*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.5/ca/*
dc.subjectImage sensorsfr
dc.subjectGas sensorsfr
dc.subjectScanning electron microscopyfr
dc.subjectSecondary emissionfr
dc.subjectSemiconductorsfr
dc.titleDepletion layer imaging using a gaseous secondary electron detector in an environmental scanning electron microscopefr
dc.typeArticlefr
udes.description.typestatusPost-publicationfr
udes.description.typepubRévisé et accepté par des pairsfr
udes.description.pages76-78fr
udes.description.period75(1)fr
udes.description.diffusionDiffusé par Savoirs UdeS, le dépôt institutionnel de l'Université de Sherbrookefr
dc.identifier.bibliographicCitationPhillips, M. R., Toth, M., Drouin, D. (1999). Depletion layer imaging using a gaseous secondary electron detector in an environmental scanning electron microscope. Applied physics letters, 75(1), 76-78. doi:http://dx.doi.org/10.1063/1.124281fr
udes.description.sourceApplied physics lettersfr
udes.autorisation.depottruefr
udes.description.ordreauteursPhillips, M. R.; Toth, M.; Drouin, D.fr


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Attribution - Pas d’Utilisation Commerciale - Pas de Modification 2.5 Canada
Except where otherwise noted, this document's license is described as Attribution - Pas d’Utilisation Commerciale - Pas de Modification 2.5 Canada