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dc.contributor.authorAyari-Kanoun, Asmafr
dc.contributor.authorDrouin, Dominiquefr
dc.contributor.authorBeauvais, Jacquesfr
dc.contributor.otherLysenko, Vladimirfr
dc.contributor.otherNychyporuk, Tetyanafr
dc.contributor.otherSouifi, Abdelkaderfr
dc.date.accessioned2017-10-01T15:58:18Z
dc.date.available2017-10-01T15:58:18Z
dc.date.created2009fr
dc.date.issued2017-10-01
dc.identifier.urihttp://hdl.handle.net/11143/11309
dc.description.abstractAbstract : An approach to form a monolayer of organized silicon nanocrystals on a monocrystalline Si wafer is reported. Ordered arrays of nanoholes in a silicon nitride layer were obtained by combining electron beam lithography and plasma etching. Then, a short electrochemical etching current pulse led to formation of a single Si nanocrystal per each nanohole. As a result, high quality silicon nanocrystal arrays were formed with well controlled and reproducible morphologies. In future, this approach can be used to fabricate single electron devices.fr
dc.language.isoengfr
dc.relation.isformatofdoi:http://dx.doi.org/10.1063/1.3247884fr
dc.relation.ispartofISSN:1077-3118fr
dc.relation.ispartofApplied physics lettersfr
dc.rightsAttribution - Pas d’Utilisation Commerciale - Pas de Modification 2.5 Canada*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.5/ca/*
dc.subjectNanocrystalsfr
dc.subjectSiliconfr
dc.subjectPlasma etchingfr
dc.subjectEtchingfr
dc.subjectElectrochemistryfr
dc.titleOrganization of silicon nanocrystals by localized electrochemical etchingfr
dc.typeArticlefr
udes.description.typestatusPost-publicationfr
udes.description.typepubRévisé et accepté par des pairsfr
udes.description.pages153105-1-153105-3fr
udes.description.period95,153105(2009)fr
udes.description.diffusionDiffusé par Savoirs UdeS, le dépôt institutionnel de l'Université de Sherbrookefr
dc.identifier.bibliographicCitationAyari-Kanoun, A., Drouin, D., Beauvais, J., Lysenko, V., Nychyporuk, T., Souifi, A. (2009). Organization of silicon nanocrystals by localized electrochemical etching. Applied physics letters, 95,153105(2009), 153105-1-153105-3. doi:http://dx.doi.org/10.1063/1.3247884 .fr
udes.description.sourceApplied physics lettersfr
udes.autorisation.depottruefr
udes.description.ordreauteursAyari-Kanoun, Asma, Drouin, Dominique, Beauvais, Jacques, Lysenko, Vladimir, Nychyporuk, Tetyana, Souifi, Abdelkaderfr


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Except where otherwise noted, this document's license is described as Attribution - Pas d’Utilisation Commerciale - Pas de Modification 2.5 Canada