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dc.contributor.authorDroulers, G.fr
dc.contributor.authorBeaumont, A.fr
dc.contributor.authorBeauvais, Jacquesfr
dc.contributor.authorDrouin, Dominiquefr
dc.date.accessioned2017-09-29T17:39:50Z
dc.date.available2017-09-29T17:39:50Z
dc.date.created2011fr
dc.date.issued2017-09-29
dc.identifier.urihttp://hdl.handle.net/11143/11300
dc.description.abstractAbstract : Electronic devices based on tunnel junctions require tools able to accurately control the thickness of thin metal and oxide layers on the order of the nanometer. This article shows that multisample ellipsometry is an accurate method to reach this goal on plain uniform layers, in particular for titanium. From these measurements, the authors carefully studied the oxidation rate of titanium thin films in an oxygen plasma. The authors found that the oxide thickness saturates at 5.4±0.4 nm5.4±0.4 nm after 10 min in the plasma with an ion acceleration power of 30 W. Increasing this power to 240 W increases the saturation value to 7.6±0.4 nm7.6±0.4 nm. An x-ray photoelectron spectroscopy study of the oxide has shown that the oxide created by O2O2 plasma is stoichiometric (TiO2)(TiO2). The developed model was also used to measure the thicknesses of titanium and titanium oxide layers that have been polished using a chemical mechanical planarization process and a material removal rate of 5.9 nm/min is found with our planarization parameters. I. INTRODUCTIONfr
dc.language.isoengfr
dc.relation.isformatofdoi:http://dx.doi.org/10.1116/1.3553209fr
dc.relation.ispartofISSN:2166-2754fr
dc.relation.ispartofJournal of vacuum science & technology. B, Nanotechnology and microelectronics : materials, processing, measurement, and phenomenafr
dc.rightsAttribution - Pas d’Utilisation Commerciale - Pas de Modification 2.5 Canada*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.5/ca/*
dc.subjectOxidationfr
dc.subjectPlasma materials processingfr
dc.subjectTitaniumfr
dc.subjectEllipsometryfr
dc.subjectSemiconductor device modelingfr
dc.titleSpectroscopic ellipsometry on thin titanium oxide layers grown on titanium by plasma oxidationfr
dc.typeArticlefr
udes.description.typestatusPost-publicationfr
udes.description.typepubRévisé et accepté par des pairsfr
udes.description.pages021010-1-021010-6fr
udes.description.period29,021010(2011)fr
udes.description.diffusionDiffusé par Savoirs UdeS, le dépôt institutionnel de l'Université de Sherbrookefr
dc.identifier.bibliographicCitationDroulers, G., Beaumont, A., Beauvais, J., and Drouin, D. (2011). Spectroscopic ellipsometry on thin titanium oxide layers grown on titanium by plasma oxidation. Journal of vacuum science & technology. B, Nanotechnology and microelectronics : materials, processing, measurement, and phenomena, 29,021010(2011), 021010-1-021010-6. doi:http://dx.doi.org/10.1116/1.3553209fr
udes.description.sourceJournal of vacuum science & technology. B, Nanotechnology and microelectronics : materials, processing, measurement, and phenomenafr
udes.autorisation.depottruefr
udes.description.ordreauteursDroulers, G., Beaumont, A., Beauvais, J., Drouin, D.fr


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Except where otherwise noted, this document's license is described as Attribution - Pas d’Utilisation Commerciale - Pas de Modification 2.5 Canada