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dc.contributor.authorEl Hajjam, Khalilfr
dc.contributor.authorSouifi, Abdelkaderfr
dc.contributor.authorEcoffey, Sergefr
dc.contributor.authorDrouin, Dominiquefr
dc.contributor.otherBaboux, Nicolasfr
dc.contributor.otherCalmon, Francisfr
dc.contributor.otherPoncelet, Olivierfr
dc.contributor.otherFrancis, Laurent A.fr
dc.date.accessioned2017-09-20T20:28:00Z
dc.date.available2017-09-20T20:28:00Z
dc.date.created2014fr
dc.date.issued2017-09-20
dc.identifier.urihttp://hdl.handle.net/11143/11266
dc.description.abstractAbstract : The development of metallic single electron transistor (SET) depends on the downscaling and the electrical properties of its tunnel junctions. These tunnel junctions should insure high tunnel current levels, low thermionic current, and low capacitance. The authors use atomic layer deposition to fabricate Al2O3 and HfO2 thin layers. Tunnel barrier engineering allows the achievement of low capacitance Al2O3 and HfO2 tunnel junctions using optimized annealing and plasma exposure conditions. Different stacks were designed and fabricated to increase the transparency of the tunnel junction while minimizing thermionic current. This tunnel junction is meant to be integrated in SET to enhance its electrical properties (e.g., operating temperature, ION/IOFF ratio).fr
dc.language.isoengfr
dc.relation.isformatofdoi:http://dx.doi.org/10.1116/1.4853075fr
dc.relation.ispartofISSN:1520-8559fr
dc.relation.ispartofJournal of vacuum science & technology. A, Vacuum, surfaces, and filmsfr
dc.rightsAttribution - Pas d’Utilisation Commerciale - Pas de Modification 2.5 Canada*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.5/ca/*
dc.subjectOzonefr
dc.subjectDielectric thin filmsfr
dc.subjectDielectricsfr
dc.subjectElectric currentsfr
dc.subjectCapacitancefr
dc.titleHighly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineeringfr
dc.typeArticlefr
udes.description.typestatusPost-publicationfr
udes.description.typepubRévisé et accepté par des pairsfr
udes.description.period32, 01A132fr
udes.description.diffusionDiffusé par Savoirs UdeS, le dépôt institutionnel de l'Université de Sherbrookefr
dc.identifier.bibliographicCitationEl Hajjam, K., Baboux, N., Calmon, F., Souifi, A., Poncelet, O., ... Ecoffey, S., Drouin, D. (2014). Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 32, 01A132. doi:http://dx.doi.org/10.1116/1.4853075fr
udes.description.sourceJournal of vacuum science & technology. A, Vacuum, surfaces, and filmsfr
udes.autorisation.depottruefr
udes.description.ordreauteursEl Hajjam, Khalil; Baboux, Nicolas; Calmon, Francis; Souifi, Abdelkader; Poncelet, Olivier; Francis, Laurent A.; Ecoffey, Serge; Drouin, Dominiquefr


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Attribution - Pas d’Utilisation Commerciale - Pas de Modification 2.5 Canada
Except where otherwise noted, this document's license is described as Attribution - Pas d’Utilisation Commerciale - Pas de Modification 2.5 Canada