Show simple document record

dc.contributor.authorBioud, Youcef A.fr
dc.contributor.authorBoucherif, Abderraouffr
dc.contributor.authorBelarouci, Alifr
dc.contributor.authorParadis, Étiennefr
dc.contributor.authorDrouin, Dominiquefr
dc.contributor.authorArès, Richardfr
dc.date.accessioned2017-09-20T18:21:51Z
dc.date.available2017-09-20T18:21:51Z
dc.date.created2016fr
dc.date.issued2017-09-20
dc.identifier.urihttp://hdl.handle.net/11143/11263
dc.description.abstractAbstract : We have performed a detailed characterization study of electrochemically etched p-type GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and characterized through cathodoluminescence (CL), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). It was found that after electrochemical etching, the porous layer showed a major decrease in the CL intensity and a change in chemical composition and in the crystalline phase. Contrary to previous reports on p-GaAs porosification, which stated that the formed layer is composed of porous GaAs, we report evidence that the porous layer is in fact mainly constituted of porous As2O3. Finally, a qualitative model is proposed to explain the porous As2O3 layer formation on p-GaAs substrate.fr
dc.language.isoengfr
dc.relation.isformatofdoi:10.1186/s11671-016-1642-zfr
dc.relation.ispartofISSN:1556-276Xfr
dc.relation.ispartofNanoscale research lettersfr
dc.rightsAttribution - Pas d’Utilisation Commerciale - Pas de Modification 2.5 Canada*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.5/ca/*
dc.subjectGaAs nanostructuresfr
dc.subjectPorous GaAsfr
dc.subjectElectrochemical etchingfr
dc.subjectCathodoluminescencefr
dc.titleChemical composition of nanoporous layer formed by electrochemical etching of p-type GaAsfr
dc.typeArticlefr
udes.description.typestatusPost-publicationfr
udes.description.typepubRévisé et accepté par des pairsfr
udes.description.pages1-8fr
udes.description.period11:446fr
udes.description.diffusionDiffusé par Savoirs UdeS, le dépôt institutionnel de l'Université de Sherbrookefr
dc.identifier.bibliographicCitationBioud, Y. A., Boucherif, A., Belarouci, A., Paradis, É., Drouin, D., Arès, R. (2016). Chemical composition of nanoporous layer formed by electrochemical etching of p-type GaAs. Nanoscale research letters, 11:446, 1-8. doi:10.1186/s11671-016-1642-zfr
udes.description.sourceNanoscale research lettersfr
udes.autorisation.depottruefr
udes.description.ordreauteursBioud, Youcef A.; Boucherif, Abderraouf; Belarouci, Ali; Paradis, Étienne; Drouin, Dominique; Arès, Richardfr


Files in this document

Thumbnail
Thumbnail

This document appears in the following Collection(s)

Show simple document record

Attribution - Pas d’Utilisation Commerciale - Pas de Modification 2.5 Canada
Except where otherwise noted, this document's license is described as Attribution - Pas d’Utilisation Commerciale - Pas de Modification 2.5 Canada