We report on a study of the fabrication of submicron silicide structures with a resistless lithography technique. Several different metals can be used as a basis for producing silicide using this method; in this work, results will be discussed for both platinum and nickel silicide. The feasibility of producing nanostructures using polycrystalline silicon as a base growth layer for metal–oxide– semiconductor, and other device applications have also been demonstrated. Threshold doses for this method for submicron lines (<50 nm) and square areas were obtained in order to establish a framework for the fabrication of more complex devices. Preliminary electrical measurements were carried out which indicate that the resistivity of the silicide is 45 [mu omega] cm, and that the barrier height of the silicide/(high resistivity silicon) interface is 0.56 eV.