Abstract : Single-electron transistors are fabricated with a planar self-aligned process using chemical mechanical polishing. The method is demonstrated with Ti∕TiOxTi∕TiOx junctions and resistless lithography. The device characterization showed Coulomb blockade up to 433K433K. High temperature data allowed one to calculate the impact of the process variations on the charging energy and thus on a realistic operating temperature. It is found that single electron devices can have an operating temperature range similar to conventional silicon transistors, opening the door to hybrid designs. These approaches are promising because advanced functionality is created by an optimal combination of both technology strengths.