Abstract : An inductively coupled plasma etch process for the fabrication of TiN nanostructures over nanotopography is presented. Using a Cl2/Ar/N2 plasma, a selectivity of 50 is achieved over SiO2. The effect of N2 ﬂow rate on the etch rates and the nonvolatile residues on TiN sidewalls is investigated. As N2 ﬂow rate is increased up to 50 sccm, a change in the deposition of the nonvolatile residues on TiN sidewalls is observed. The current density–voltage characterizations of TiN devices fabricated with TiN nanostructure sidewalls are presented. The measured current densities of two different samples etched with low and high N2 ﬂow rate, respectively, demonstrated the presence after cleaning of an insulating layer deposited on the sidewalls for low N2 ﬂow rate only.